Galeeva, A. V. and Ryabova, L. I. and Nikorich, A. V. and Ganichev, S. D. and Danilov, S. N. and Bel'kov, V. V. and Khokhlov, D. R. (2010) Photoconductivity of the Narrow-Gap Pb1-xSnxTe(In) Semiconductors in the Terahertz Spectral Range. JETP LETTERS, 91 (1). pp. 35-37. ISSN 0021-3640,
Full text not available from this repository. (Request a copy)Abstract
The spectral dependence of photoconductivity in the doped narrow-gap semiconductor Pb0.75Sn0.25Te(In) under the action of terahertz laser radiation pulses has been studied at temperatures 4.2-30 K. It is shown that the photoconductivity spectrum of the semiconductor spreads at least up to the wavelength of 500 mu m. This value is more than twice higher than the red cutoff wavelength of 220 mu m in uniaxially stressed Ge(Ga) which is known as the most long-wavelength photodetector among sensitive photon detectors of radiation. Mechanisms responsible for photosensitivity of PbSnTe(In) in the terahertz spectral range are discussed.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ALLOYS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 17 Aug 2020 09:17 |
| Last Modified: | 17 Aug 2020 09:17 |
| URI: | https://pred.uni-regensburg.de/id/eprint/25492 |
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