Smet, J. H. and Deutschmann, R. A. and Ertl, F. and Wegscheider, Werner and Abstreiter, G. and von Klitzing, K. (2002) Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor. NATURE, 415 (6869). pp. 281-286. ISSN 0028-0836
Full text not available from this repository. (Request a copy)Abstract
Semiconductors are ubiquitous in device electronics, because their charge distributions can be conveniently manipulated with voltages to perform logic operations. Achieving a similar level of control over the spin degrees of freedom, either from electrons or nuclei, could provide intriguing prospects for both information processing and the study of fundamental solid-state physics issues. Here we report procedures that carry out the controlled transfer of spin angular momentum between electrons-confined to two dimensions and subjected to a perpendicular magnetic field-and the nuclei of the host semiconductor, using gate voltages only. We show that the spin transfer rate can be enhanced near a ferromagnetic ground state of the electron system, and that the induced nuclear spin polarization can be subsequently stored and 'read out'. These techniques can also be combined into a spectroscopic tool to detect the low-energy collective excitations in the electron system that promote the spin transfer. The existence of such excitations is contingent on appropriate electron-electron correlations, and these can be tuned by changing, for example, the electron density via a gate voltage.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | OPTICALLY PUMPED NMR; GAAS QUANTUM-WELLS; LEVEL FILLING NU=1; PHASE-TRANSITIONS; COMPUTATION; EXCITATIONS; SKYRMIONS; RESONANCE; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 15 Nov 2021 10:05 |
| Last Modified: | 15 Nov 2021 10:05 |
| URI: | https://pred.uni-regensburg.de/id/eprint/40670 |
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