Fuhrer, A. and Dorn, A. and Luescher, S. and Heinzel, T. and Ensslin, K. and Wegscheider, W. and Bichler, M. (2002) Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation. SUPERLATTICES AND MICROSTRUCTURES, 31 (1). pp. 19-42. ISSN 0749-6036
Full text not available from this repository.Abstract
Semiconductor nanostructures are fabricated by local oxidation of Ga[Al]As heterostructures with an atomic force microscope (AFM). The GaAs surface is locally oxidized by applying a bias between the substrate and a conductive AFM tip in a humidity-controlled environment. For high-quality two-dimensional electron gases (2DEGS) located close enough to the sample surface the electrons get depleted below the oxidized regions. This way the plane of a 2DEG can be cut into various conductive areas which are laterally insulated from each other. The realization of several high-quality semiconductor nanostructures is demonstrated. I. Quantum wires are fabricated with smooth and steep potential. II. Quantum dots tuned by in-plane gate electrodes can be operated in the regime, where electrons tunnel sequentially through individual quantum levels. III. Antidot superlattices with high-precision lattice parameters display characteristic features of classical and quantum transport. (C) 2002 Elsevier Science Ltd. All rights reserved.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ATOMIC-FORCE MICROSCOPE; SCANNING-TUNNELING-MICROSCOPE; QUANTUM HALL REGIME; COULOMB-BLOCKADE OSCILLATIONS; POINT CONTACTS; CONDUCTANCE; DOT; TRANSPORT; FABRICATION; SPECTRUM; atomic force lithography; semiconductor nanostructures; 2DEG |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Depositing User: | Petra Gürster |
| Date Deposited: | 18 May 2021 09:36 |
| Last Modified: | 18 May 2021 09:36 |
| URI: | https://pred.uni-regensburg.de/id/eprint/40843 |
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