Fritsch, J. and Arnold, M. and Schroeder, U. (2000) Ab initio calculation of the phonon dispersion of antimony-covered (110) surfaces of III-V compounds. PHYSICAL REVIEW B, 61 (24). pp. 16682-16691. ISSN 1098-0121, 1550-235X
Full text not available from this repository.Abstract
We present the results from nh initio linear-response calculations performed to investigate the surface phonon dispersion of the antimony-covered (110) surfaces of GaAs, GaP, InAs, and InP. Our computations are carried out for a complete monolayer coverage of antimony adsorbed in the epitaxial continued layer structure. The surfaces are described within the slab-supercell approach. Our density-functional formalism is based on the plane-wave pseudopotential method and the local-density approximation. Rie identify characteristic vibrations of the adsorption overlayer, interface modes, and phonons related to those of the pristine surfaces with changed dispersion due to the adsorption. A comparison of the modes computed for the different systems allows us to analyze systematic trends and to study more thoroughly the physical origin of vibrational states occurring on adsorbate-covered and clean III-V(110) surfaces. Our computed phonon frequencies are in good agreement with experimental data.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | III-V(110) SURFACES; INP(110) SURFACES; INTERFACE PHONONS; SB OVERLAYERS; GAAS(110); SEMICONDUCTORS; DIFFRACTION; MONOLAYERS; ADSORPTION; SCATTERING; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Theroretical Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 05 Apr 2022 13:23 |
| Last Modified: | 05 Apr 2022 13:23 |
| URI: | https://pred.uni-regensburg.de/id/eprint/42406 |
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