FREYTAG, B and ROSSLER, U (1993) THE FANO-ANDERSON MODEL APPLIED TO ELECTRONS IN MIS-INVERSION LAYERS. SURFACE SCIENCE, 295 (3). pp. 385-392. ISSN 0039-6028,
Full text not available from this repository.Abstract
Subband states in n-inversion layers on nar-row gap semiconductors are resonances due to the Zener coupling to the continuum of the bulk valence band. Thus excitation between subband states resembles the autoionization process of atomic physics described long ago by Fano. Starting from Kane's model for narrow gap semiconductors to describe the subband states we map the problem onto the Fano-Anderson Hamiltonian by applying a Schrieffer-Wolff transformation. This problem is solved self-consistently using an analytical surface potential. We calculate the relative transmission rate DELTAT(omega)/T(omega) for inversion layers on narrow-gap Hg1-xCdxTe and discuss our results in comparison with experimental data.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | NARROW-GAP SEMICONDUCTORS; |
| Depositing User: | Dr. Gernot Deinzer |
| Last Modified: | 19 Oct 2022 08:42 |
| URI: | https://pred.uni-regensburg.de/id/eprint/53764 |
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