Diebel, Laura K. and Zinkl, Lukas G. and Hoetzinger, Andreas and Reichmann, Felix and Lisker, Marco and Yamamoto, Yuji and Bougeard, Dominique (2025) Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices. AIP ADVANCES, 15 (3): 035301. ISSN 2158-3226
Full text not available from this repository. (Request a copy)Abstract
Gate-tunable semiconductor nanosystems are getting more and more important in the realization of quantum circuits. While such devices are typically cooled to operation temperature with zero bias applied to the gate, biased cooling corresponds to a non-zero gate voltage being applied before reaching the operation temperature. We systematically study the effect of biased cooling on different undoped SiGe/Si/SiGe quantum well field-effect stacks designed to accumulate and density-tune two-dimensional electron gases (2DEGs). In an empirical model, we show that biased cooling of the undoped FES induces a static electric field, which is constant at operation temperature and superimposes onto the field exerted by the top gate onto the 2DEG. We show that the voltage operation window of the field-effect-tuned 2DEG can be chosen in a wide range of voltages via the choice of the biased cooling voltage. Importantly, quality features of the 2DEG such as the mobility or the temporal stability of the 2DEG density remain unaltered under biased cooling.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ELECTRON; SCATTERING |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 15 Apr 2026 05:53 |
| Last Modified: | 15 Apr 2026 05:53 |
| URI: | https://pred.uni-regensburg.de/id/eprint/66215 |
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