Mette, Gerson and Ishioka, Kunie and Youngkin, Steven and Stolz, Wolfgang and Volz, Kerstin and Hoefer, Ulrich (2025) Interface-Specific Excitation of Coherent Phonons at the Buried GaP/Si(001) Heterointerface. ADVANCED MATERIALS INTERFACES, 12 (7). p. 2400573. ISSN 2196-7350
Full text not available from this repository. (Request a copy)Abstract
Ultrafast charge-carrier and phonon dynamics at the buried heterointerface of GaP/Si(001) are investigated by means of two-color pump-probe reflectivity measurements. The carrier-induced reflectivity signal exhibits a resonant enhancement at a pump-photon energy of 1.4 eV, which is assigned to an optical transition at the interface. In addition, the transient reflectivity is modulated by a coherent oscillation at 2 THz, whose amplitude also becomes maximum at 1.4 eV. The observed resonant behavior of the oscillation, in combination with the characteristic wavelength-dependencies of its frequency and its initial phase, strongly indicates that the 2-THz mode is a difference-combination mode between a GaP-like and a Si-like phonon at the heterointerface and that the corresponding second-order Raman scattering process can be enhanced by a double resonance involving the interfacial electronic states.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | RAMAN-SCATTERING; SILICON; REFLECTIVITY; TRANSITIONS; SPECTRA; STATES; SI; buried heterointerface; coherent phonons; experiment; GaP/Si(001); interface phonon; pump-probe; transient reflectivity; ultrafast dynamics |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 15 Apr 2026 04:42 |
| Last Modified: | 15 Apr 2026 04:42 |
| URI: | https://pred.uni-regensburg.de/id/eprint/66732 |
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