Gonzalez-Angulo, Marco Antonio and Mitryakhin, Victor Nikolaevich and Axt, Marleen and Pareek, Devendra and Gutay, Levent and Silies, Martin and Leissner, Till and Hoefer, Ulrich and Schäfer, Sascha and Schneider, Christian (2025) Second Harmonic Characteristics of Large-Area ALD-Grown MoS2 Monolayers and MoS2/WS2 Heterostructures with Sub-Millimeter Crystalline Orientation. ADVANCED MATERIALS INTERFACES, 12 (23). e00480. ISSN 2196-7350
Full text not available from this repository. (Request a copy)Abstract
The crystal orientation uniformity of MoS2 monolayers grown by atomic layer deposition (ALD) on sapphire substrates is investigated, and their integration with spin-coated WS2 in a MoS2/WS2 heterostructure. Polarization-resolved second harmonic generation (SHG) microscopy reveals that the heterostructure exhibits an exceptionally consistent orientation across 180 x 180 mu m2 areas, with deviations of less than two degrees, despite the polycrystallinity of the WS2 layer. The SHG response of the heterostructure seems to be dominated by the orientation of the underlying MoS2 layer; only locally aligned WS2 domains (if present) contribute marginally. These findings demonstrate the robustness of the MoS2 crystal orientation and provide insights into interfacial alignment mechanisms and the orientation coherence achievable by ALD, providing a foundation for layer-selective studies of interfacial ordering in wafer-scale transition metal dichalcogenide heterostructures.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | GENERATION; DEPOSITION; EVOLUTION; atomic layer deposition; monolayer; MoS2; second harmonic generation; transition metal dichalcogenides |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Regensburg Center for UltrafastNanoscopy (RUN) |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 15 Apr 2026 04:47 |
| Last Modified: | 15 Apr 2026 04:47 |
| URI: | https://pred.uni-regensburg.de/id/eprint/66858 |
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