Mistroni, Alberto and Lisker, Marco and Yamamoto, Yuji and Wen, Wei-Chen and Fidorra, Fabian and Tetzner, Henriette and Diebel, Laura K. and Visser, Lino and Anupam, Spandan and Mourik, Vincent and Schreiber, Lars R. and Bluhm, Hendrik and Bougeard, Dominique and Zoellner, Marvin H. and Capellini, Giovanni and Reichmann, Felix (2025) High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line. APPLIED PHYSICS LETTERS, 127 (8): 083503. ISSN 0003-6951, 1077-3118
Full text not available from this repository. (Request a copy)Abstract
The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS manufacturing approach. To this end, both the gate stack and the Si/SiGe heterostructure must be of high quality, exhibiting uniformity across the wafer and consistent performance across multiple fabrication runs. Here, we report a comprehensive investigation of Si/SiGe heterostructures and gate stacks, fabricated in an industry-standard 200 mm BiCMOS pilot line. We evaluate the homogeneity and reproducibility by probing the properties of the two-dimensional electron gas (2DEG) in the shallow silicon quantum well through magnetotransport characterization of Hall bar-shaped field-effect transistors at 1.5 K. Across all the probed wafers, we observe minimal variation of the 2DEG properties, with an average maximum mobility of (4.25 +/- 0.17) x 10(5) cm(2)/Vs and low percolation carrier density of (5.9 +/- 0.18) x 10(10) cm(-2) evidencing low disorder potential in the quantum well. The observed narrow statistical distribution of the transport properties highlights the reproducibility and the stability of the fabrication process. Furthermore, wafer-scale characterization of a selected individual wafer evidenced the homogeneity of the device performances across the wafer area. Based on these findings, we conclude that our material and processes provide a suitable platform for the development of scalable, Si/SiGe-based quantum devices.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | OXIDATION |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 21 Apr 2026 04:46 |
| Last Modified: | 21 Apr 2026 04:46 |
| URI: | https://pred.uni-regensburg.de/id/eprint/67258 |
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