Rehman, Adil and Petriakov, Volodymyr and Yahniuk, Ivan and Kazakov, Aleksandr and Rogalska, Iwona and Grendysa, Jakub and Marchewka, Michal and Haras, Maciej and Wojtowicz, Tomasz and Cywinski, Grzegorz and Knap, Wojciech and Rumyantsev, Sergey (2025) Temperature and electron concentration dependences of 1/f noise in Hg1-xCdxTe - evidence for a mobility fluctuations mechanism. NANOSCALE, 17 (12). pp. 7281-7288. ISSN 2040-3364, 2040-3372
Full text not available from this repository. (Request a copy)Abstract
Hg1-xCdxTe is a unique material with its bandgap being tunable by temperature, pressure, and cadmium content over a wide range, from 1.6 eV to an inverted bandgap of -0.3 eV. This makes Hg1-xCdxTe one of the key materials for infrared and terahertz detectors, whose characteristics largely depend on the material's noise properties. In this work, we investigated the low-frequency 1/f noise in a thick (800 nm) HgCdTe layer and in a field effect transistor (FET) with an 8 nm wide HgTe quantum well. Both structures exhibited a small contribution from contact noise and showed weak noise dependences on temperature. Investigation of the 1/f noise in the HgTe quantum well FET as a function of gate voltage revealed that the noise also depends weakly on electron concentration. These findings indicate that the noise properties of Hg1-xCdxTe are similar to those of graphene, where mobility fluctuations were found to be the dominant mechanism of the 1/f noise.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | HGCDTE; RECOMBINATION; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Prof. Jörg Wunderlich |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 19 May 2026 05:24 |
| Last Modified: | 19 May 2026 05:24 |
| URI: | https://pred.uni-regensburg.de/id/eprint/67482 |
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