Items where Author is "Gebhardt, W."
 | Up a level |
Article
As, D. J. and Frey, T. and Schikora, D. and Lischka, K. and Cimalla, V. and Pezoldt, J. and Goldhahn, R. and Kaiser, S. and Gebhardt, W. (2000) Cubic GaN epilayers grown by molecular beam epitaxy on thin beta-SiC/Si (001) substrates. APPLIED PHYSICS LETTERS, 76 (13). pp. 1686-1688. ISSN 0003-6951
Kaiser, S. and Jakob, M. and Zweck, Josef and Gebhardt, W. and Ambacher, O. and Dimitrov, R. and Schremer, A. T. and Smart, J. A. and Shealy, J. R. (2000) Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 18 (2). pp. 733-740. ISSN 1071-1023
Engelhardt, F. and Bornemann, L. and Koentges, M. and Meyer, T. and Parisi, J. and Pschorr-Schoberer, Evi and Hahn, B. and Gebhardt, W. and Riedl, W. and Rau, Uwe (1999) Cu(In,Ga)Se-2 solar cells with a ZnSe buffer layer: Interface characterization by quantum efficiency measurements. PROGRESS IN PHOTOVOLTAICS, 7 (6). pp. 423-436. ISSN 1062-7995,
Paessler, R. and Griebl, E. and Riepl, H. and Lautner, G. and Bauer, S. and Preis, H. and Gebhardt, W. and Buda, B. and As, D. J. and Schikora, D. and Lischka, K. and Papagelis, K. and Ves, S. (1999) Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films. JOURNAL OF APPLIED PHYSICS, 86 (8). pp. 4403-4411. ISSN 0021-8979,
