Items where Division is "Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev" and Year is 2003

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Bel'kov, V. V. and Ganichev, Sergey D. and Schneider, Petra and Back, Christian H. and Oestreich, M. and Rudolph, J. and Haegele, D. and Golub, L. E. and Wegscheider, Werner and Prettl, W (2003) Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells. SOLID STATE COMMUNICATIONS, 128 (8). pp. 283-286. ISSN 0038-1098, 1879-2766

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Ganichev, S. D. and Prettl, W. (2003) Spin photocurrents in quantum wells. JOURNAL OF PHYSICS-CONDENSED MATTER, 15 (20). R935-R983. ISSN 0953-8984, 1361-648X

Ganichev, SD and Ketterl, H and Prettl, W (2003) Fast room temperature detection of state of circular polarization of terahertz radiation. INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 24 (6). pp. 847-853. ISSN 0195-9271

Ganichev, Sergey D. and Bel'kov, V. V. and Schneider, Petra and Ivchenko, E. L. and Tarasenko, S. A. and Wegscheider, Werner and Weiss, Dieter and Schuh, D. and Beregulin, E. V. and Prettl, Wilhelm (2003) Resonant inversion of the circular photogalvanic effect in n-doped quantum wells. PHYSICAL REVIEW B, 68 (3): 035319. ISSN 2469-9950, 2469-9969

Ganichev, Sergey D. and Schneider, Petra and Bel'kov, V. V. and Ivchenko, E. L. and Tarasenko, S. A. and Wegscheider, Werner and Weiss, Dieter and Schuh, D. and Murdin, B. N. and Phillips, P. J. and Pidgeon, C. R. and Clarke, D. G. and Merrick, M. and Murzyn, P. and Beregulin, E. V. and Prettl, Wilhelm (2003) Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures. PHYSICAL REVIEW B, 68 (8): 081302. ISSN 1098-0121

Ganichev, Sergey D. and Yassievich, I. N. and Prettl, Wilhelm (2003) Tunneling processes induced by terahertz electric fields. JOURNAL OF BIOLOGICAL PHYSICS, 29 (2-3). pp. 327-334. ISSN 0092-0606

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Perel', V. I. and Tarasenko, S. A. and Yassievich, I. N. and Ganichev, Sergey D. and Bel'kov, V. V. and Prettl, Wilhelm (2003) Spin-dependent tunneling through a symmetric semiconductor barrier. PHYSICAL REVIEW B, 67 (20): 201304. ISSN 2469-9950, 2469-9969