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A

Angermeier, D. and Kuhn, W. S. and Druihle, R. and Ballutaud, D. and Triboulet, R. and Gebhardt, Wolfgang (1997) Initial growth processes in the epitaxy of Ge and GeH4 on oxidized Si substrates. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144 (2). pp. 694-697. ISSN 0013-4651, 1945-7111

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Pindl, S. and Biebl, M. and Hammerl, E. and Schäfer, H. and von Philipsborn, Henning (1997) Oxidation enhanced diffusion of boron in silicon-on-insulator substrates. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144 (11). pp. 4022-4026. ISSN 0013-4651, 1945-7111

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Wittmann, J. and Bergholz, W. and Hoffmann, H. (1999) Elymat measurement of intentionally contaminated and dry etched wafers. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146 (1). pp. 313-320. ISSN 0013-4651, 1945-7111