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Hoelzl, Robert and Fabry, L. and Range, Klaus-Jürgen (2001) Gettering efficiencies for Cu and Ni as a function of size and density of oxygen precipitates in p/p- silicon epitaxial wafers. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 73 (2). pp. 137-142. ISSN 0947-8396, 1432-0630

Hoelzl, Robert and Huber, A. and Fabry, L. and Range, Klaus-Jürgen and Blietz, M. (2001) Integrity of ultrathin gate oxides with different oxide thickness, substrate wafers and metallic contaminations. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 72 (3). pp. 351-356. ISSN 0947-8396, 1432-0630

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