Plechinger, G. and Mann, J. and Preciado, E. and Barroso, D. and Nguyen, A. and Eroms, J. and Schueller, C. and Bartels, L. and Korn, T. (2014) A direct comparison of CVD-grown and exfoliated MoS2 using optical spectroscopy. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 29 (6): 064008. ISSN 0268-1242, 1361-6641
Full text not available from this repository. (Request a copy)Abstract
MoS2 is a highly interesting material, which exhibits a crossover from an indirect band gap in the bulk crystal to a direct gap for single layers. Here, we perform a direct comparison between large-area MoS2 films grown by chemical vapor deposition (CVD) and MoS2 flakes prepared by mechanical exfoliation from mineral bulk crystal. Raman spectroscopy measurements show differences between the in-plane and out-of-plane phonon mode positions in CVD-grown and exfoliated MoS2. Photoluminescence (PL) mapping reveals large regions in the CVD-grown films that emit strong PL at room-temperature, and low-temperature PL scans demonstrate a large spectral shift of the A exciton emission as a function of position. Polarization-resolved PL measurements under near-resonant excitation conditions show a strong circular polarization of the PL, corresponding to a valley polarization.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | VALLEY POLARIZATION; THERMAL-EXPANSION; PHOTOLUMINESCENCE; MONOLAYERS; LAYERS; MoS2; Raman spectroscopy; photoluminescence; excitons |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group Christian Schüller Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 28 Oct 2019 14:35 |
| Last Modified: | 28 Oct 2019 14:35 |
| URI: | https://pred.uni-regensburg.de/id/eprint/10101 |
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