Kozlov, D. A. and Kvon, Z. D. and Olshanetsky, E. B. and Mikhailov, N. N. and Dvoretsky, S. A. and Weiss, D. (2014) Transport Properties of a 3D Topological Insulator based on a Strained High-Mobility HgTe Film. PHYSICAL REVIEW LETTERS, 112 (19). ISSN 0031-9007, 1079-7114
Full text not available from this repository. (Request a copy)Abstract
We investigate the magnetotransport properties of strained 80 nm thick HgTe layers featuring a high mobility of mu similar to 4 x 10(5) cm(2/)V . s. By means of a top gate, the Fermi energy is tuned from the valence band through the Dirac-type surface states into the conduction band. Magnetotransport measurements allow us to disentangle the different contributions of conduction band electrons, holes, and Dirac electrons to the conductivity. The results are in line with previous claims that strained HgTe is a topological insulator with a bulk gap of approximate to 15 meV and gapless surface states.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 08 Nov 2019 13:24 |
| Last Modified: | 08 Nov 2019 13:24 |
| URI: | https://pred.uni-regensburg.de/id/eprint/10184 |
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