Magneto-photoluminescence of InAs/InGaAs/InAlAs quantum well structures

Terent'ev, Ya. V. and Danilov, S. N. and Loher, J. and Schuh, D. and Bougeard, D. and Weiss, D. and Durnev, M. V. and Tarasenko, S. A. and Mukhin, M. S. and Ivanov, S. V. and Ganichev, S. D. (2014) Magneto-photoluminescence of InAs/InGaAs/InAlAs quantum well structures. APPLIED PHYSICS LETTERS, 104 (10): 101111. ISSN 0003-6951, 1077-3118

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Abstract

Photoluminescence (PL) and highly circularly polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the radiative recombination in these QWs. The sign of the circular polarization indicates that it stems from the spin polarization of heavy holes caused by the Zeeman effect. Although in magnetic field the PL lines are strongly circularly polarized, no energy shift between the counter-polarized PL lines was observed. The results suggest the electron and the hole g-factor to be of the same sign and close magnitudes. (C) 2014 AIP Publishing LLC.

Item Type: Article
Uncontrolled Keywords: TRANSPORT-PROPERTIES; INAS; HETEROSTRUCTURE;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Depositing User: Dr. Gernot Deinzer
Date Deposited: 18 Nov 2019 09:09
Last Modified: 18 Nov 2019 09:09
URI: https://pred.uni-regensburg.de/id/eprint/10474

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