Quantum capacitance of a three-dimensional topological insulator based on HgTe

Kozlov, D. A. and Bauer, D. and Ziegler, J. and Fischer, R. and Savchenko, M. L. and Kvon, Z. D. and Mikhailov, N. N. and Dvoretsky, S. A. and Weiss, D. (2017) Quantum capacitance of a three-dimensional topological insulator based on HgTe. LOW TEMPERATURE PHYSICS, 43 (4). pp. 430-436. ISSN 1063-777X, 1090-6517

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Abstract

The quantum capacitance that directly characterizes the density of states of highly mobile Dirac two-dimensional states formed on the surface of a stressed HgTe film is studied experimentally. It is shown that, as opposed to the oscillations in the magnetotransport to which all the existing types of carriers contribute, the quantum oscillations observed in the magnetic capacitance correspond to electrons on the upper surface of the film. Thus, capacitance spectroscopy is a selective technique for studying the properties of an individual topological surface, even when a large number of bulk carriers are present. Because of this feature, for the first time we have obtained data on the phase shift in the Shubnikov-de Haas oscillations usually associated with the Berry phase for an isolated Dirac cone and found its dependence on the location of the Fermi level. Published by AIP Publishing.

Item Type: Article
Uncontrolled Keywords: DENSITY-OF-STATES;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Depositing User: Dr. Gernot Deinzer
Date Deposited: 14 Dec 2018 13:11
Last Modified: 26 Feb 2019 14:09
URI: https://pred.uni-regensburg.de/id/eprint/1076

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