Zudov, M. A. and Dmitriev, I. A. and Friess, B. and Shi, Q. and Umansky, V. and von Klitzing, K. and Smet, J. (2017) Hall field-induced resistance oscillations in a tunable-density GaAs quantum well. PHYSICAL REVIEW B, 96 (12): 121301. ISSN 2469-9950, 2469-9969
Full text not available from this repository.Abstract
We report on Hall field-induced resistance oscillations (HIROs) in a 60-nm-wide GaAs/AlGaAs quantum well with an in situ grown back gate, which allows tuning the carrier density n. At low n, when all electrons are confined to the lowest subband (SB1), the HIRO frequency, proportional to the product of the cyclotron diameter and the Hall field, scales with n(-1/2) as expected. Remarkably, the population of the second subband (SB2) significantly enhances the HIROs, whereas their frequency now scales as n(-1). We demonstrate that in this two-subband regime HIROs still originate solely from backscattering of SB1 electrons. The unusual density dependence occurs because the population of SB2 steadily increases, whereas that of SB1 remains essentially unchanged. The enhancement of the HIROs manifests an unexpected steplike increase in the quantum lifetime of SB1 electrons, which reaches a record value of 52 ps in the two-subband regime.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | 2-DIMENSIONAL ELECTRON-GAS; SYSTEM; HETEROSTRUCTURES; PHYSICS; MBE; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Theroretical Physics > Chair Professor Grifoni > Group Milena Grifoni Physics > Institute of Theroretical Physics > Chair Professor Grifoni > Group John Schliemann Physics > Institute of Theroretical Physics > Chair Professor Grifoni > Group Ferdinand Evers Physics > Institute of Theroretical Physics > Chair Professor Grifoni > Group David Egger |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 14 Dec 2018 13:15 |
| Last Modified: | 28 Feb 2019 09:16 |
| URI: | https://pred.uni-regensburg.de/id/eprint/1188 |
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