Voelkl, Tobias and Rockinger, Tobias and Drienovsky, Martin and Watanabe, Kenji and Taniguchi, Takashi and Weiss, Dieter and Eroms, Jonathan (2017) Magnetotransport in heterostructures of transition metal dichalcogenides and graphene. PHYSICAL REVIEW B, 96 (12): 125405. ISSN 2469-9950, 2469-9969
Full text not available from this repository. (Request a copy)Abstract
We use a van der Waals pickup technique to fabricate different heterostructures containing WSe2(WS2) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts, and a top gate was deposited. For graphene/WSe2/SiO2 samples we observe mobilities of similar to 12 000 cm(2) V-1 s(-1). Magnetic-field-dependent resistance measurements on these samples show a peak in the conductivity at low magnetic fields. This dip is attributed to the weak antilocalization (WAL) effect, stemming from spin-orbit coupling. Samples where graphene is encapsulated between WSe2(WS2) and hexagonal boron nitride show a much higher mobility of up to similar to 120 000 cm(2) V-1 s(-1). However, in these samples noWAL peak can be observed. We attribute this to a transition from the diffusive to the quasiballistic regime. At low magnetic fields a resistance peak appears, which we ascribe to a size effect due to boundary scattering. Shubnikov-de Haas oscillations in fully encapsulated samples show all integer filling factors due to complete lifting of the spin and valley degeneracies.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SPIN; LAYERS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 14 Dec 2018 13:15 |
| Last Modified: | 28 Feb 2019 09:18 |
| URI: | https://pred.uni-regensburg.de/id/eprint/1192 |
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