Schwemmer, M. and Nagler, P. and Hanninger, A. and Schueller, C. and Korn, T. (2017) Long-lived spin polarization in n-doped MoSe2 monolayers. APPLIED PHYSICS LETTERS, 111 (8): 082404. ISSN 0003-6951, 1077-3118
Full text not available from this repository. (Request a copy)Abstract
Transition metal dichalcogenide monolayers are highly interesting for potential valleytronic applications due to the coupling of spin and valley degrees of freedom and valley-selective excitonic transitions. However, ultrafast recombination of excitons in these materials poses a natural limit for applications so that a transfer of polarization to resident carriers is highly advantageous. Here, we study the low-temperature spin-valley dynamics in nominally undoped and n-doped MoSe2 monolayers using time-resolved Kerr rotation. In the n-doped MoSe2, we find a long-lived component of the Kerr signal which we attribute to the spin polarization of resident carriers. This component is absent in the nominally undoped MoSe2. The long-lived spin polarization is stable under applied in-plane magnetic fields. Spatially resolved measurements allow us to determine an upper boundary for the electron spin diffusion constant in MoSe2. Published by AIP Publishing.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | VALLEY POLARIZATION; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group Christian Schüller |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 14 Dec 2018 13:16 |
| Last Modified: | 27 Feb 2019 10:26 |
| URI: | https://pred.uni-regensburg.de/id/eprint/1374 |
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