Terahertz Photoconductivity in Hg1-xCdxTe near the Transition from the Direct to Inverted Spectrum

Galeeva, A. V. and Artamkin, A. I. and Mikhailov, N. N. and Dvoretskii, S. A. and Danilov, S. N. and Ryabova, L. I. and Khokhlov, D. R. (2017) Terahertz Photoconductivity in Hg1-xCdxTe near the Transition from the Direct to Inverted Spectrum. JETP LETTERS, 106 (3). pp. 162-166. ISSN 0021-3640, 1090-6487

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Abstract

For the Hg1-xCdxTe-based structures, it is shown that the transition from the direct to inverted spectrum is accompanied by the sign change for the signals related to the terahertz photoconductivity and to the magnetophotogalvanic effect. Within the range of chemical compositions corresponding to the inverted spectrum, the photoconductivity kinetics exhibits specific features, which can result from the surface topological states.

Item Type: Article
Uncontrolled Keywords: GAPLESS SEMICONDUCTOR; STATES; INSULATORS; GAP;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Depositing User: Dr. Gernot Deinzer
Date Deposited: 14 Dec 2018 13:16
Last Modified: 18 Feb 2019 14:50
URI: https://pred.uni-regensburg.de/id/eprint/1402

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