Plank, H. and Tarasenko, S. A. and Hummel, T. and Knebl, G. and Pfeffer, R. and Kamp, M. and Hoefling, S. and Ganichev, S. D. (2017) Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 85. pp. 193-198. ISSN 1386-9477, 1873-1759
Full text not available from this repository.Abstract
We report on the observation of photogalvanic effects induced by terahertz radiation in type-II GaSb/InAs quantum wells with inverted band order. Photocurrents are excited at oblique incidence of radiation and consist of several contributions varying differently with the change of the radiation polarization state; the one driven by the helicity and the other one driven by the linearly polarization of radiation are of comparable magnitudes. Experimental and theoretical analyses reveal that the photocurrent is dominated by the circular and linear photogalvanic effects in a system with a dominant structure inversion asymmetry. A microscopic theory developed in the framework of the Boltzmann equation of motion considers both photogalvanic effects and describes well all the experimental findings. (C) 2016 Elsevier B.V. All rights reserved.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | TOPOLOGICAL INSULATORS; DEEP IMPURITIES; SEMICONDUCTORS; IONIZATION; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 14 Dec 2018 12:58 |
| Last Modified: | 15 Feb 2019 09:51 |
| URI: | https://pred.uni-regensburg.de/id/eprint/154 |
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