Olbrich, P. and Drexler, C. and Golub, L. E. and Danilov, S. N. and Shalygin, V. A. and Yakimova, R. and Lara-Avila, S. and Kubatkin, S. and Redlich, B. and Huber, R. and Ganichev, S. D. (2013) Reststrahl band-assisted photocurrents in epitaxial graphene layers. PHYSICAL REVIEW B, 88 (24): 245425. ISSN 2469-9950, 2469-9969
Full text not available from this repository.Abstract
We report on the observation of the reststrahl band-assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that nonlinear optical and optoelectronic phenomena in two-dimensional crystals and other atomic scale structures can be giantly enhanced by their deposition on a substrate with negative dielectric constant.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | TUNNELING IONIZATION; PLASMONS; GENERATION; FILMS; MIXER; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 23 Mar 2020 07:22 |
| Last Modified: | 23 Mar 2020 07:22 |
| URI: | https://pred.uni-regensburg.de/id/eprint/15516 |
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