Muennich, Gerhard and Donarini, Andrea and Wenderoth, Martin and Repp, Jascha (2013) Fixing the Energy Scale in Scanning Tunneling Microscopy on Semiconductor Surfaces. PHYSICAL REVIEW LETTERS, 111 (21): 216802. ISSN 0031-9007, 1079-7114
Full text not available from this repository.Abstract
In scanning tunneling experiments on semiconductor surfaces, the energy scale within the tunneling junction is usually unknown due to tip-induced band bending. Here, we experimentally recover the zero point of the energy scale by combining scanning tunneling microscopy with Kelvin probe force spectroscopy. With this technique, we revisit shallow acceptors buried in GaAs. Enhanced acceptor-related conductance is observed in negative, zero, and positive band-bending regimes. An Anderson-Hubbard model is used to rationalize our findings, capturing the crossover between the acceptor state being part of an impurity band for zero band bending and the acceptor state being split off and localized for strong negative or positive band bending, respectively.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ATOMIC-FORCE MICROSCOPY; WORK FUNCTION; TIP; SPECTROSCOPY; GAAS; METALS; STATES; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Theroretical Physics > Chair Professor Grifoni > Group Milena Grifoni Physics > Institute of Experimental and Applied Physics > Chair Professor Giessibl > Group Jascha Repp |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 26 Mar 2020 07:49 |
| Last Modified: | 26 Mar 2020 07:49 |
| URI: | https://pred.uni-regensburg.de/id/eprint/15663 |
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