Effect of contact geometry on spin-transport signals in nonlocal (Ga,Mn)As/GaAs devices

Ciorga, M. and Utz, M. and Schuh, D. and Bougeard, D. and Weiss, D. (2013) Effect of contact geometry on spin-transport signals in nonlocal (Ga,Mn)As/GaAs devices. PHYSICAL REVIEW B, 88 (15): 155308. ISSN 1098-0121, 1550-235X

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Abstract

We report on spin-valve experiments in lateral spin-injection devices with different geometries of (Ga,Mn)As/GaAs spin Esaki diode contacts. We study the influence of the geometry of the contacts, i.e., their widths and the crystallographic orientation, on the magnetization reversal process and the resulting pattern observed in the spin-valve signal. We find that tuning of the magnetic anisotropy of the narrow (Ga,Mn) As stripes by means of lithographically induced anisotropic strain relaxation allows one to realize parallel, antiparallel, and even orthogonal configurations of magnetizations in injector and detector contacts. Understanding of the switching between these configurations during sweeping of the external in-plane magnetic field is crucial for a proper interpretation of the measured nonlocal spin signals.

Item Type: Article
Uncontrolled Keywords: ELECTRICAL DETECTION; ROOM-TEMPERATURE; INJECTION; VALVE;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Depositing User: Dr. Gernot Deinzer
Date Deposited: 27 Mar 2020 14:36
Last Modified: 27 Mar 2020 14:36
URI: https://pred.uni-regensburg.de/id/eprint/15853

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