Binder, M. and Nirschl, A. and Zeisel, R. and Hager, T. and Lugauer, H. -J. and Sabathil, M. and Bougeard, D. and Wagner, J. and Galler, B. (2013) Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence. APPLIED PHYSICS LETTERS, 103 (7): 071108. ISSN 0003-6951,
Full text not available from this repository. (Request a copy)Abstract
We report the direct observation of hot carriers generated by Auger recombination via photoluminescence spectroscopy on tailored (AlGaIn)N multiple quantum well (QW) structures containing alternating green and ultra-violet (UV) emitting (GaIn) N QWs. Optically pumping solely the green QWs using a blue emitting high power laser diode, carrier densities similar to electrical light-emitting diode (LED) operation were achieved, circumventing possible leakage and injection effects. This way, luminescence from the UV QWs could be observed for excitation where the emission from the green QWs showed significant droop, giving direct evidence for Auger generated hot electrons and holes being injected into the UV QWs. An examination of the quantitative relation between the intensity of the UV luminescence and the amount of charge carriers lost due to drooping of the QWs supports the conclusion that Auger processes contribute significantly to the droop phenomenon in (AlGaIn) N based light-emitting diodes. (C) 2013 AIP Publishing LLC.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | LIGHT-EMITTING-DIODES; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 02 Apr 2020 10:58 |
| Last Modified: | 02 Apr 2020 10:58 |
| URI: | https://pred.uni-regensburg.de/id/eprint/16233 |
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