Zabel, Thomas and Sircar, Narayan and Hauke, Norman and Zweck, Josef and Doeblinger, Markus and Kaniber, Michael and Finley, Jonathan J. and Abstreiter, Gerhard and Arakawa, Yasuhiko and Bougeard, Dominique (2013) Laterally self-ordered silicon-germanium islands with optimized confinement properties. APPLIED PHYSICS LETTERS, 103 (6): 063105. ISSN 0003-6951,
Full text not available from this repository. (Request a copy)Abstract
We present an analysis of the electronic confinement properties of self-assembled islands forming via silicon and germanium co-deposition in molecular beam epitaxy. This approach allows the fabrication of laterally self-ordered three dimensional islands in the Stranski-Krastanow growth mode. Using a systematic structural analysis, we derive a realistic fit-parameter free island model for band structure simulations. A comparison between these band structure simulations and photoluminescence spectroscopy shows that such islands have a significant three dimensional spatial electron-hole wave function overlap. In addition, we show that this spatial wave function overlap overcompensates a weak wave function spreading in k-space. (C) 2013 AIP Publishing LLC.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | POROUS SILICON; QUANTUM DOTS; LUMINESCENCE; PHOTOLUMINESCENCE; NANOSTRUCTURES; EXCITONS; DEVICES; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Josef Zweck Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 02 Apr 2020 12:00 |
| Last Modified: | 02 Apr 2020 12:00 |
| URI: | https://pred.uni-regensburg.de/id/eprint/16241 |
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