Gohlke, David and Mishra, Rohan and Restrepo, Oscar D. and Lee, Donghun and Windl, Wolfgang and Gupta, Jay (2013) Atomic-Scale Engineering of the Electrostatic Landscape of Semiconductor Surfaces. NANO LETTERS, 13 (6). pp. 2418-2422. ISSN 1530-6984, 1530-6992
Full text not available from this repository. (Request a copy)Abstract
A low-temperature scanning tunneling microscope was used in conjunction with density functional theory calculations to determine the binding sites and charge states of adsorbed Ga and Mn atoms on GaAs(110). To quantify the adatom charge states (both +1e), the Coulomb interaction with an individual Mn acceptor is measured via tunneling spectroscopy and compared with theoretical predictions. Several methods for positioning these charged adatoms are demonstrated, allowing us to engineer the electrostatic landscape of the surface with atomic precision.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | INITIO MOLECULAR-DYNAMICS; RESONANT PHOTOEMISSION; SINGLE DOPANTS; MN; GAAS; GA1-XMNXAS; DEFECTS; VACANCY; ENERGY; STATES; Surface potential; solotronics; charged adatoms; GaAs; atomic manipulation |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Giessibl > Group Jascha Repp |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 08 Apr 2020 07:09 |
| Last Modified: | 08 Apr 2020 07:09 |
| URI: | https://pred.uni-regensburg.de/id/eprint/16545 |
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