Baturina, Tatyana I. and Kalok, David and Bilusic, Ante and Vinokur, Valerii M. and Baklanov, Mikhail R. and Gutakovskii, Anton K. and Latyshev, Alexander V. and Strunk, Christoph (2013) Dual threshold diode based on the superconductor-to-insulator transition in ultrathin TiN films. APPLIED PHYSICS LETTERS, 102 (4): 042601. ISSN 0003-6951,
Full text not available from this repository. (Request a copy)Abstract
We investigate transport properties of superconducting TiN films in the vicinity of the superconductor-insulator transition (SIT). We show that the current-voltage (I-V) characteristics are mirror-symmetric with respect to the SIT and can be switched to each other by the applied magnetic field. In both superconducting and insulating states, the low-temperature I-V characteristics have pronounced diode-like threshold character, demonstrating voltage/current jumps over several orders of magnitude at the corresponding critical current or threshold voltage. We have found that for both states, the theory developed for Josephson junction arrays offers a quantitative description of the experimental results. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789510]
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | JOSEPHSON-JUNCTION ARRAYS; SPIN PARAMAGNETIC LIMITATION; SCHOTTKY-BARRIER CONTACTS; QUANTUM PHASE-TRANSITION; HIGH-QUALITY TIN; TITANIUM NITRIDE; DIFFUSION-BARRIERS; VAPOR-DEPOSITION; TEMPERATURE; DEPENDENCE; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Christoph Strunk |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 28 Apr 2020 05:58 |
| Last Modified: | 28 Apr 2020 05:58 |
| URI: | https://pred.uni-regensburg.de/id/eprint/17272 |
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