Oltscher, M. and Eberle, F. and Kuczmik, T. and Bayer, A. and Schuh, D. and Bougeard, D. and Ciorga, M. and Weiss, D. (2017) Gate-tunable large magnetoresistance in an all-semiconductor spin valve device. NATURE COMMUNICATIONS, 8: 1807. ISSN 2041-1723,
Full text not available from this repository. (Request a copy)Abstract
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last few decades in devices with lateral semiconducting transport channels between ferromagnetic source and drain contacts has been the main obstacle for realizing spin field effect transistor proposals. Here, we show both a large two-terminal magnetoresistance in a lateral spin valve device with a two-dimensional channel, with up to 80% resistance change, and tunability of the magnetoresistance by an electric gate. The enhanced magnetoresistance is due to finite electric field effects at the contact interface, which boost spin-to-charge conversion. The gating scheme that we use is based on switching between uni- and bidirectional spin diffusion, without resorting to spin-orbit coupling. Therefore, it can also be employed in materials with low spin-orbit coupling.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | FIELD-EFFECT TRANSISTOR; ELECTRICAL DETECTION; ROOM-TEMPERATURE; SILICON; SPINTRONICS; PRECESSION; INJECTION; CONTACTS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 14 Dec 2018 13:19 |
| Last Modified: | 25 Feb 2019 14:44 |
| URI: | https://pred.uni-regensburg.de/id/eprint/1828 |
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