Lohr, Matthias and Schregle, Ralph and Jetter, Michael and Waechter, Clemens and Mueller-Caspary, Knut and Mehrtens, Thorsten and Rosenauer, Andreas and Pietzonka, Ines and Strassburg, Martin and Zweck, Josef (2016) Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structures. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (1). pp. 140-144. ISSN 0370-1972, 1521-3951
Full text not available from this repository. (Request a copy)Abstract
Piezoelectric and spontaneous polarization play an essential role in GaN-based devices. InGaN quantum wells (QWs) in GaN host material, especially grown along the polar c-direction, exhibit strong internal fields in the QW region due to the indium-induced strain. An exact knowledge of the electric fields is essential, since they are one of the factors limiting the performance of green LDs and LEDs. Differential phase contrast in a scanning transmission electron microscope enables direct, local, and quantitative measurements of these electric fields. For a multiQW sample, it was possible to determine the piezoelectric field in the range of 43-67MVm(-1) with a resolution of 10MVm(-1) (= 10mVnm(-1)). (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | PIEZOELECTRIC FIELD; MACROSCOPIC POLARIZATION; THICKNESS MEASUREMENT; SPECIMEN-THICKNESS; SPECTROSCOPY; GAINN/GAN; DPC; efficiency droop; EFTEM; electric fields; GaN; HAADF; IMFP; MQW; QCSE; quantification; STEM |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Josef Zweck |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 01 Mar 2019 12:36 |
| Last Modified: | 06 Mar 2019 08:58 |
| URI: | https://pred.uni-regensburg.de/id/eprint/2180 |
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