Bockhorn, L. and Velieva, A. and Hakim, S. and Wagner, T. and Rugeramigabo, E. P. and Schuh, D. and Reichl, C. and Wegscheider, W. and Haug, R. J. (2016) Influence of oval defects on transport properties in high-mobility two-dimensional electron gases. APPLIED PHYSICS LETTERS, 108 (9): 092103. ISSN 0003-6951, 1077-3118
Full text not available from this repository. (Request a copy)Abstract
Rare macroscopic growth defects next to a two-dimensional electron gas influence transport properties and cause a negative magnetoresistance. On the basis of this, we show that the number of oval defects seen on the material surface is comparable with the density of macroscopic growth defects determined from the negative magnetoresistance. We examine several materials with different densities of oval defects n(S) which were grown in one cycle under the same conditions to verify our observations. Paradoxically, the material with the largest number of oval defects has also the highest electron mobility. (C) 2016 AIP Publishing LLC.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | MOLECULAR-BEAM EPITAXY; ORIGIN; GROWTH; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 11 Mar 2019 14:59 |
| Last Modified: | 11 Mar 2019 14:59 |
| URI: | https://pred.uni-regensburg.de/id/eprint/2382 |
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