Nirschl, Anna and Binder, Michael and Schmid, Marina and Pietzonka, Ines and Lugauer, Hans-Juergen and Zeisel, Roland and Sabathil, Matthias and Bougeard, Dominique and Galler, Bastian (2016) Towards quantification of the crucial impact of auger recombination for the efficiency droop in (AlInGa) N quantum well structures. OPTICS EXPRESS, 24 (3). pp. 2971-2980. ISSN 1094-4087,
Full text not available from this repository. (Request a copy)Abstract
Recent experimental investigations on the reduction of internal quantum efficiency with increasing current density in (AlInGa)N quantum well structures show that Auger recombination is a significant contributor to the so-called "droop" phenomenon. Using photoluminescence (PL) test structures, we find Auger processes are responsible for at least 15 % of the measured efficiency droop. Furthermore, we confirm that electron-electron-hole (nnp) is stronger than electron-hole-hole (npp) Auger recombination in standard LEDs. The ratio of respective Auger coefficients is determined to be in the range 1 < C-nnp = C-npp <= 12. This asymmetry is shown to limit the detection efficiency of Auger processes in our PL-based approach. (C) 2016 Optical Society of America
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | LIGHT-EMITTING-DIODES; GAN; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 12 Mar 2019 12:11 |
| Last Modified: | 12 Mar 2019 12:11 |
| URI: | https://pred.uni-regensburg.de/id/eprint/2410 |
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