Observation of anisotropic interlayer Raman modes in few-layer ReS2

Nagler, Philipp and Plechinger, Gerd and Schueller, Christian and Korn, Tobias (2016) Observation of anisotropic interlayer Raman modes in few-layer ReS2. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 10 (2). pp. 185-189. ISSN 1862-6254, 1862-6270

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Abstract

ReS2 has recently emerged as a new member in the rapidly growing family of two-dimensional materials. Unlike MoS2 or WSe2, the optical and electrical properties of ReS2 are not isotropic due to the reduced symmetry of the crystal. Here, we present layer-dependent Raman measurements of ReS2 samples ranging from monolayers to ten layers in the ultralow frequency regime. We observe layer breathing and shear modes which allow for easy assignment of the number of layers. Polarization-dependent measurements give further insight into the crystal structure and reveal an energetic shift of the shear mode which stems from the in-plane anisotropy of the shear modulus in this material. ((c) 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)

Item Type: Article
Uncontrolled Keywords: FIELD-EFFECT TRANSISTORS; INPLANE ANISOTROPY; ATOMIC LAYERS; MONOLAYER; SCATTERING; GRAPHENE; SEMICONDUCTOR; SPECTROSCOPY; MULTILAYER; PHONON; transition metal dichalcogenides; ReS2; Raman spectroscopy; anisotropy; interlayer modes
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group Christian Schüller
Depositing User: Dr. Gernot Deinzer
Date Deposited: 13 Mar 2019 08:29
Last Modified: 13 Mar 2019 08:29
URI: https://pred.uni-regensburg.de/id/eprint/2446

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