Hubmann, Joachim and Bauer, Benedikt and Koerner, Helmut S. and Furthmeier, Stephan and Buchner, Martin and Bayreuther, Guenther and Dirnberger, Florian and Schuh, Dieter and Back, Christian H. and Zweck, Josef and Reiger, Elisabeth and Bougeard, Dominique (2016) Epitaxial Growth of Room-Temperature Ferromagnetic MnAs Segments on GaAs Nanowires via Sequential Crystallization. NANO LETTERS, 16 (2). pp. 900-905. ISSN 1530-6984, 1530-6992
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We investigate the incorporation of manganese into self-catalyzed GaAs nanowires grown in molecular beam epitaxy. Our study reveals that Mn accumulates in the liquid Ga droplet and that no significant incorporation into the nanowire is observed. Using a sequential crystallization of the droplet, we then demonstrate a deterministic and epitaxial growth of MnAs segments at the nanowire tip. This technique may allow the seamless integration of multiple room temperature ferromagnetic segments into GaAs nanowires with high-crystalline quality:
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ELECTRICAL SPIN INJECTION; MOLECULAR-BEAM EPITAXY; MAGNETIC-PROPERTIES; CORE-SHELL; SEMICONDUCTORS; SILICON; ORIENTATION; FLOW; MnAs segment; GaAs nanowire; deterministic epitaxial growth; room-temperature ferromagnet; sequential crystallization; single-domain |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Josef Zweck Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 13 Mar 2019 09:12 |
| Last Modified: | 13 Mar 2019 09:12 |
| URI: | https://pred.uni-regensburg.de/id/eprint/2455 |
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