Tovari, Endre and Makk, Peter and Liu, Ming-Hao and Rickhaus, Peter and Kovacs-Krausz, Zoltan and Richter, Klaus and Schoenenberger, Christian and Csonka, Szabolcs (2016) Gate-controlled conductance enhancement from quantum Hall channels along graphene p-n junctions. NANOSCALE, 8 (47). pp. 19910-19916. ISSN 2040-3364, 2040-3372
Full text not available from this repository. (Request a copy)Abstract
The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to the new conducting channels formed in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are determined by the gate-controlled filling factor across the device. This effect could be exploited to probe the behavior and interaction of quantum Hall channels protected against uncontrolled scattering at the edges.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ELECTRONICS; TRANSPORT; REGIME; PHASE; FIELD; SPIN; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Klaus Richter |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 21 Mar 2019 06:55 |
| Last Modified: | 21 Mar 2019 06:55 |
| URI: | https://pred.uni-regensburg.de/id/eprint/2603 |
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