Photo-induced exfoliation of monolayer transition metal dichalcogenide semiconductors

Wu, Si-Si and Huang, Teng-Xiang and Lin, Kai-Qiang and Yao, Xu and Hu, Jing-Ting and Tang, Ding-Liang and Bao, Yi-Fan and Ren, Bin (2019) Photo-induced exfoliation of monolayer transition metal dichalcogenide semiconductors. 2D MATERIALS, 6 (4): 045052. ISSN 2053-1583,

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Abstract

Transition metal dichalcogenide (TMDC) monolayers have attracted great attention due to their unique electronic properties, which promise their applications especially in optoelectronics and valleytronics. A simple and reliable way to fabricate the monolayers is highly desirable for wide applications. Herein, we report a photo-induced exfoliation method for the controllable fabrication of monolayer TMDCs proceeded with the oxidation reaction of TMDCs by the photo-generated holes. The commonly used microscope halogen lamp is sufficient to initiate the exfoliation in pure water. A bulk MoS2 flake with a surface area of 10 000 mu m(2) and a thickness of 100 nm can be directly exfoliated down to monolayer within four seconds under a 94 nW mu m(-2) 660 nm laser illumination and by applying 0.1 V potential electrochemically, achieving an astonishing exfoliation speed and efficiency. This method is demonstrated to be applicable also to other semiconducting TMDCs, such as MoSe2, WSe2, and WS2.

Item Type: Article
Uncontrolled Keywords: LARGE-AREA SYNTHESIS; MOS2; FABRICATION; SURFACES; LAYERS; WSE2; photo-induced exfoliation; 2D semiconductors; transition metal dichalcogenides; monolayer fabrication; thinning
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group Christian Schüller
Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group John Lupton
Depositing User: Dr. Gernot Deinzer
Date Deposited: 26 Mar 2020 05:32
Last Modified: 26 Mar 2020 05:32
URI: https://pred.uni-regensburg.de/id/eprint/26052

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