Wang, Jimin and Schitko, Markus and Mussler, Gregor and Gruetzmacher, Detlev and Weiss, Dieter (2019) Capacitance-Voltage Measurements of (Bi1-xSbx)(2)Te-3 Field Effect Devices. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 256 (7): 1800624. ISSN 0370-1972, 1521-3951
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Capacitance-voltage (C-V) traces in n-type-(Bi1-xSbx)(2)Te-3/oxide/metal capacitor structures using an AC capacitance bridge are investigated. By tuning the top gate voltage (V-tg) from positive to negative values, the system at the interface is tuned from accumulation, via depletion into inversion. The results show the typical low-frequency and high frequency C-V traces, depending on measuring frequency, temperature, and illumination intensity and reflecting their sensitive dependence on recombination/generation rates. Superimposed a strong hysteresis under inversion is also observed which is ascribed to the presence of conventional localized surface states (LSS) which coexist with topological surface states (TSS).
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | CONDUCTION; INSULATOR; BREAKDOWN; MOBILITY; CHANNEL; BI2SE3; STATES; (Bi1-xSbx)(2)Te-3 (BST); capacitance hysteresis; capacitance measurements; low temperatures; topological insulators |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 07 Apr 2020 08:43 |
| Last Modified: | 07 Apr 2020 08:43 |
| URI: | https://pred.uni-regensburg.de/id/eprint/26713 |
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