Candussio, S. and Budkin, G. and Otteneder, M. and Kozlov, D. A. and Dmitriev, I. A. and Bel'kov, V. V. and Kvon, Z. D. and Mikhailov, N. N. and Dvoretsky, S. A. and Ganichev, S. D. (2019) Cyclotron-resonance-induced photogalvanic effect in surface states of 200-nm-thick strained HgTe films. PHYSICAL REVIEW MATERIALS, 3 (5): 054205. ISSN 2475-9953,
Full text not available from this repository.Abstract
We report on the study of magnetophotogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant resonant photocurrent caused by the cyclotron resonance in the surface states. The resonant photocurrent is also detected in the reference fully strained 80 nm HgTe films previously shown to be fully gapped 3D topological insulators. We show that the resonance positions in both types of films almost coincide demonstrating the existence of topologically protected surface states in thick HgTe films. The conclusion is supported by magnetotransport experiments.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | MISFIT; SPIN; DISLOCATIONS; GROWTH; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 08 Apr 2020 06:13 |
| Last Modified: | 08 Apr 2020 06:13 |
| URI: | https://pred.uni-regensburg.de/id/eprint/26982 |
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