Feldmeier, Christian and Abiko, Masayoshi and Schwarz, Ulrich T. and Kawakami, Yoichi and Micheletto, Ruggero (2009) Transient memory effect in the photoluminescence of InGaN single quantum wells. OPTICS EXPRESS, 17 (25). pp. 22855-22860. ISSN 1094-4087,
Full text not available from this repository. (Request a copy)Abstract
The transition to maximum photoluminescence of InGaN single quantum wells is a phenomena that has time constants in the range of few seconds. Using a systematic illumination/darkening procedure we found that these characteristics are related to previous stimulations as if the sample has a memory of past illumination events. Choosing opportune time sequences, time constants were observed to vary more than 100%. These facts suggest the presence of carrier trapping/de-trapping processes that act beyond the single illumination event, accumulating over time in a complex effect. (C) 2009 Optical Society of America
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | III NITRIDE SEMICONDUCTORS; OPTICAL METASTABILITY; GAN; |
| Subjects: | 500 Science > 530 Physics 500 Science > 540 Chemistry & allied sciences |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Ulrich Schwarz Chemistry and Pharmacy > Institut für Organische Chemie |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 27 Aug 2020 10:26 |
| Last Modified: | 27 Aug 2020 10:26 |
| URI: | https://pred.uni-regensburg.de/id/eprint/27991 |
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