Dvoretskii, S. A. and Kvon, Z. D. and Mikhailov, N. N. and Shvets, V. A. and Aseev, A. L. and Wittmann, B. and Danilov, S. N. and Ganichev, S. D. (2009) CdHgTe-based nanostructures for photodetectors. JOURNAL OF OPTICAL TECHNOLOGY, 76 (12). pp. 787-790. ISSN 1070-9762,
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This paper presents the results of growing quantum wells based on HgTe (HgTe/Cd(0.735)Hg(0.265)Te) 16.2 and 21 nm thick on substrates of (013) CdTe/ZnTe/GaAs by molecular-beam epitaxy. The composition and thickness of the spacer and of the quantum well were monitored by an ellipsometric technique during growth. Galvanomagnetic studies in a wide range of magnetic fields (1-12 T) at temperatures close to that of liquid helium (4.2 K) showed that a two-dimensional electron gas is present in the nanostructures and that the levels are quantized. High mobilities were obtained for the two-dimensional electron gas: mu(e)=2 x 10(5) cm(2)/(V.sec) for an electron density of N(s)=1.5 x 10(11) cm(-2) and mu(e)=5 x 10(5) cm(2)/(V.sec) for N(s)=3.5 x 10(11) cm(-2). The circular and linear photogalvanic effects were studied in the quantum wells at room temperature in a wide wavelength interval: from the mid-IR (6-16 mu m) to the terahertz range (100-500 mu m). (C) 2009 Optical Society of America.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | MOLECULAR-BEAM EPITAXY; HGTE/HGCDTE SUPERLATTICES; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 31 Aug 2020 09:17 |
| Last Modified: | 31 Aug 2020 09:17 |
| URI: | https://pred.uni-regensburg.de/id/eprint/28060 |
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