Jiang, Wanjun and Wirthmann, Andre and Gui, Y. S. and Zhou, X. Z. and Reinwald, M. and Wegscheider, W. and Hu, C. -M. and Williams, Gwyn (2009) Critical behavior from the anomalous Hall effect in (GaMn)As. PHYSICAL REVIEW B, 80 (21): 214409. ISSN 1098-0121,
Full text not available from this repository. (Request a copy)Abstract
An unconventional approach to scaling based on the anomalous Hall effect is presented and utilized to demonstrate conclusively that epitaxial (metallic) Ga(0.98)Mn(0.02)As is a mean-field ferromagnet. Such a result provides strong support for the assertion that the underlying interactions can be treated within the framework of Landau mean-field theory, direct support for which had previously been lacking. This scaling approach also provides confirmation-albeit indirect-that the origin of the anomalous Hall effect in this system is intrinsic at the composition studied.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | FERROMAGNETISM; SEMICONDUCTORS; (GA,MN)AS; MN)AS; (GA; critical phenomena; ferromagnetic materials; gallium compounds; Hall effect; magnetic epitaxial layers; magnetic semiconductors |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 31 Aug 2020 10:08 |
| Last Modified: | 31 Aug 2020 10:08 |
| URI: | https://pred.uni-regensburg.de/id/eprint/28084 |
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