Badalyan, S. M. and Vignale, G. (2009) Spin Hall Drag in Electronic Bilayers. PHYSICAL REVIEW LETTERS, 103 (19): 196601. ISSN 0031-9007, 1079-7114
Full text not available from this repository.Abstract
We predict a new effect in electronic bilayers: spin Hall drag. The effect consists of the generation of spin accumulation across one layer by an electric current along the other layer. It arises from the combined action of spin-orbit and Coulomb interactions. Our theoretical analysis, based on the Boltzmann equation formalism, identifies two main contributions to the spin Hall drag resistivity: the side-jump contribution, which dominates at low temperature, going as T-2, and the skew-scattering contribution, which is proportional to T-3. The induced spin accumulation, while generally quite small, should be observable in optical rotation experiments.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | COULOMB DRAG; SEMICONDUCTORS; SYSTEMS; FERROMAGNETS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Theroretical Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 02 Sep 2020 05:49 |
| Last Modified: | 02 Sep 2020 05:49 |
| URI: | https://pred.uni-regensburg.de/id/eprint/28140 |
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