Einwanger, A. and Ciorga, M. and Wurstbauer, U. and Schuh, D. and Wegscheider, W. and Weiss, D. (2009) Tunneling anisotropic spin polarization in lateral (Ga,Mn)As/GaAs spin Esaki diode devices. APPLIED PHYSICS LETTERS, 95 (15): 152101. ISSN 0003-6951,
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We report here on anisotropy of spin polarization obtained in lateral all-semiconductor, all-electrical spin injection devices employing p(+)-(Ga,Mn)As/n(+)-GaAs Esaki diode structures as spin aligning contacts, resulting from the dependence of the efficiency of spin tunneling on the orientation of spins with respect to different crystallographic directions. We observed an in-plane anisotropy of 8% in the case of spins oriented either along [1 (1) over bar0] or [110] direction and 25% anisotropy between in-plane and perpendicular-to-plane orientations of spins. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3247187]
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | INJECTION; SPINTRONICS; GAAS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Rupert Huber Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 03 Sep 2020 08:06 |
| Last Modified: | 03 Sep 2020 08:07 |
| URI: | https://pred.uni-regensburg.de/id/eprint/28276 |
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