Moon, Jin-Woo and Chung, Sang-Koo (2009) An Analytical Expression for Current Gain of an IGBT. JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY, 4 (3). pp. 401-404. ISSN 1975-0102,
Full text not available from this repository. (Request a copy)Abstract
A simple analytical expression for a current gain of IGBT is derived in terms of the device parameters as well as a gate length dependent parameter, which allows for the determination of the current components of the device as a function of its gate length. The analytical results are compared with those from simulation results. A good agreement is found.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ; IGBT; Current Gain; Analytical Expression |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 09 Sep 2020 04:59 |
| Last Modified: | 09 Sep 2020 04:59 |
| URI: | https://pred.uni-regensburg.de/id/eprint/28493 |
Actions (login required)
 |
View Item |
