Orbital effects on tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions

Wimmer, M. and Lobenhofer, M. and Moser, J. and Matos-Abiague, A. and Schuh, D. and Wegscheider, W. and Fabian, J. and Richter, K. and Weiss, D. (2009) Orbital effects on tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions. PHYSICAL REVIEW B, 80 (12): 121301. ISSN 1098-0121,

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Abstract

We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the magnitude of the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by magnetic field strength. Theoretical modeling shows that the interplay of the orbital effects of a magnetic field and the Dresselhaus spin-orbit coupling in the GaAs barrier leads to an independent contribution to the TAMR effect with uniaxial symmetry, whereas the Bychkov-Rashba spin-orbit coupling does not play a role. The effect is intrinsic to barriers with bulk inversion asymmetry.

Item Type: Article
Uncontrolled Keywords: SPINTRONICS;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Klaus Richter
Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian
Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Depositing User: Dr. Gernot Deinzer
Date Deposited: 09 Sep 2020 08:17
Last Modified: 09 Sep 2020 08:17
URI: https://pred.uni-regensburg.de/id/eprint/28540

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