Nikolaev, S. N. and Aronzon, B. A. and Ryl'kov, V. V. and Tugushev, V. V. and Demidov, E. S. and Levchuk, S. A. and Lesnikov, V. P. and Podol'skii, V. V. and Gareev, R. R. (2009) Anomalous Hall effect in highly Mn-Doped silicon films. JETP LETTERS, 89 (12). pp. 603-608. ISSN 0021-3640, 1090-6487
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The transport and magnetic properties of Mn (x) Si1 - x films with a high (x a parts per thousand 0.35) content of Mn produced by laser deposition at growth temperatures of 300-350A degrees C have been studied in a temperature range of 5-300 K in magnetic fields of up to 2.5 T. The films exhibit a hole-type metallic conductivity and a relatively weak change of magnetization in a temperature range of 50-200 K. An anomalous Hall effect with an essentially hysteretic behavior from 50 K up to a parts per thousand 230 K has been discovered. The properties of the films are explained by the two-phase model, in which ferromagnetic clusters containing interstitial Mn ions with a localized magnetic moment are embedded in the matrix of a weak band MnSi2 - x (x a parts per thousand 0.3) type ferromagnet with delocalized spin density.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SEMICONDUCTORS; MN4SI7; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 10 Sep 2020 12:42 |
| Last Modified: | 10 Sep 2020 12:42 |
| URI: | https://pred.uni-regensburg.de/id/eprint/28638 |
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