Mapping the magnetic anisotropy in (Ga,Mn)As nanostructures

Hoffmann, F. and Woltersdorf, G. and Wegscheider, W. and Einwanger, A. and Weiss, D. and Back, C. H. (2009) Mapping the magnetic anisotropy in (Ga,Mn)As nanostructures. PHYSICAL REVIEW B, 80 (5): 054417. ISSN 1098-0121,

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Abstract

Anisotropic strain relaxation in (Ga,Mn)As nanostructures was studied combining time-resolved Kerr microscopy and ferromagnetic resonance techniques. Local resonance measurements on individual narrow stripes patterned along various crystallographic directions reveal that the easy axis of the magnetization can be forced perpendicular to the strain relaxation direction. Spatially resolved measurements on disk-shaped and rectangular (Ga,Mn)As structures allow us to directly visualize these local changes in the magnetic anisotropy. We show that the strain-induced edge anisotropy allows for an effective control of the coercive field in stripe structures.

Item Type: Article
Uncontrolled Keywords: FERROMAGNETIC-RESONANCE; GA1-XMNXAS; coercive force; ferromagnetic resonance; gallium arsenide; magnetic anisotropy; manganese compounds; nanostructured materials; semimagnetic semiconductors
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Christian Back
Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Depositing User: Dr. Gernot Deinzer
Date Deposited: 10 Sep 2020 08:47
Last Modified: 10 Sep 2020 08:47
URI: https://pred.uni-regensburg.de/id/eprint/28667

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