Gate control of low-temperature spin dynamics in two-dimensional hole systems

Kugler, M. and Andlauer, T. and Korn, T. and Wagner, A. and Fehringer, S. and Schulz, R. and Kubova, M. and Gerl, C. and Schuh, D. and Wegscheider, W. and Vogl, P. and Schueller, C. (2009) Gate control of low-temperature spin dynamics in two-dimensional hole systems. PHYSICAL REVIEW B, 80 (3): 035325. ISSN 1098-0121,

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Abstract

We have investigated spin and carrier dynamics of resident holes in high-mobility two-dimensional hole systems in GaAs/Al0.3Ga0.7As single-quantum wells at temperatures down to 400 mK. Time-resolved Faraday and Kerr rotation as well as time-resolved photoluminescence spectroscopy are utilized in our study. We observe long-lived hole-spin dynamics that are strongly temperature dependent, indicating that in-plane localization is crucial for hole-spin coherence. By applying a gate voltage, we are able to tune the observed hole g factor by more than 50%. Calculations of the hole g tensor as a function of the applied bias show excellent agreement with our experimental findings.

Item Type: Article
Uncontrolled Keywords: QUANTUM-WELL STRUCTURES; GAAS; RELAXATION; SPINTRONICS; EXCITONS; DOTS;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group Christian Schüller
Depositing User: Dr. Gernot Deinzer
Date Deposited: 14 Sep 2020 05:21
Last Modified: 14 Sep 2020 05:21
URI: https://pred.uni-regensburg.de/id/eprint/28791

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